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Impact of Strain Engineering on Antiferroelectricity in NaNbO(3) Thin Films

[Image: see text] Thin films of NaNbO(3) were grown on various substrates to investigate the effect of epitaxial strain on their structural and electrical properties. Reciprocal space maps confirmed the presence of epitaxial strain from +0.8% to −1.2%. A bulk-like antipolar ground state was detected...

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Detalles Bibliográficos
Autores principales:	Schneider, Thorsten, Cardoletti, Juliette, Komissinskiy, Philipp, Alff, Lambert
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2023
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10324056/ https://www.ncbi.nlm.nih.gov/pubmed/37426281 http://dx.doi.org/10.1021/acsomega.3c01327

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