Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films

[Image: see text] Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (a-Se) as a wide bandgap at ∼2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact io...

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Detalles Bibliográficos
Autores principales: Mukherjee, Atreyo, Han, Zhihang, Triet Ho, Le Thanh, Rumaiz, Abdul K., Vasileska, Dragica, Goldan, Amir H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10324078/
https://www.ncbi.nlm.nih.gov/pubmed/37426242
http://dx.doi.org/10.1021/acsomega.3c01256

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10324078/
https://www.ncbi.nlm.nih.gov/pubmed/37426242
http://dx.doi.org/10.1021/acsomega.3c01256

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