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Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films
[Image: see text] Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (a-Se) as a wide bandgap at ∼2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact io...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10324078/ https://www.ncbi.nlm.nih.gov/pubmed/37426242 http://dx.doi.org/10.1021/acsomega.3c01256 |