Area-Selective Atomic Layer Deposition of ZnO on Si\SiO(2) Modified with Tris(dimethylamino)methylsilane

Delayed atomic layer deposition (ALD) of ZnO, i.e., area selective (AS)-ALD, was successfully achieved on silicon wafers (Si\SiO(2)) terminated with tris(dimethylamino)methylsilane (TDMAMS). This resist molecule was deposited in a home-built, near-atmospheric pressure, flow-through, gas-phase reacto...

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Detalles Bibliográficos
Autores principales: Moeini, Behnam, Avval, Tahereh G., Brongersma, Hidde H., Průša, Stanislav, Bábík, Pavel, Vaníčková, Elena, Strohmeier, Brian R., Bell, David S., Eggett, Dennis, George, Steven M., Linford, Matthew R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10342755/
https://www.ncbi.nlm.nih.gov/pubmed/37445002
http://dx.doi.org/10.3390/ma16134688

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10342755/
https://www.ncbi.nlm.nih.gov/pubmed/37445002
http://dx.doi.org/10.3390/ma16134688

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