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Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors

Charge transport characteristics in organic semiconductor devices become altered in the presence of traps due to defects or impurities in the semiconductors. These traps can lead to a decrease in charge carrier mobility and an increase in recombination rates, thereby ultimately affecting the overall...

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Autores principales: Morab, Seema, Sundaram, Manickam Minakshi, Pivrikas, Almantas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10342843/
https://www.ncbi.nlm.nih.gov/pubmed/37445005
http://dx.doi.org/10.3390/ma16134691
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author Morab, Seema
Sundaram, Manickam Minakshi
Pivrikas, Almantas
author_facet Morab, Seema
Sundaram, Manickam Minakshi
Pivrikas, Almantas
author_sort Morab, Seema
collection PubMed
description Charge transport characteristics in organic semiconductor devices become altered in the presence of traps due to defects or impurities in the semiconductors. These traps can lead to a decrease in charge carrier mobility and an increase in recombination rates, thereby ultimately affecting the overall performance of the device. It is therefore important to understand and mitigate the impact of traps on organic semiconductor devices. In this contribution, the influence of the capture and release times of trap states, recombination rates, and the Lorentz force on the net charge of a low-mobility organic semiconductor was determined using the finite element method (FEM) and Hall effect method through numerical simulations. The findings suggest that increasing magnetic fields had a lesser impact on net charge at constant capture and release times of trap states. On the other hand, by increasing the capture time of trap states at a constant magnetic field and fixed release time, the net charge extracted from the semiconductor device increased with increasing capture time. Moreover, the net charge extracted from the semiconductor device was nearly four and eight times greater in the case of the non-Langevin recombination rates of 0.01 and 0.001, respectively, when compared to the Langevin rate. These results imply that the non-Langevin recombination rate can significantly enhance the performance of semiconductor devices, particularly in applications that require efficient charge extraction. These findings pave the way for the development of more efficient and cost-effective electronic devices with improved charge transport properties and higher power conversion efficiencies, thus further opening up new avenues for research and innovation in this area of modern semiconductor technology.
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spelling pubmed-103428432023-07-14 Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors Morab, Seema Sundaram, Manickam Minakshi Pivrikas, Almantas Materials (Basel) Article Charge transport characteristics in organic semiconductor devices become altered in the presence of traps due to defects or impurities in the semiconductors. These traps can lead to a decrease in charge carrier mobility and an increase in recombination rates, thereby ultimately affecting the overall performance of the device. It is therefore important to understand and mitigate the impact of traps on organic semiconductor devices. In this contribution, the influence of the capture and release times of trap states, recombination rates, and the Lorentz force on the net charge of a low-mobility organic semiconductor was determined using the finite element method (FEM) and Hall effect method through numerical simulations. The findings suggest that increasing magnetic fields had a lesser impact on net charge at constant capture and release times of trap states. On the other hand, by increasing the capture time of trap states at a constant magnetic field and fixed release time, the net charge extracted from the semiconductor device increased with increasing capture time. Moreover, the net charge extracted from the semiconductor device was nearly four and eight times greater in the case of the non-Langevin recombination rates of 0.01 and 0.001, respectively, when compared to the Langevin rate. These results imply that the non-Langevin recombination rate can significantly enhance the performance of semiconductor devices, particularly in applications that require efficient charge extraction. These findings pave the way for the development of more efficient and cost-effective electronic devices with improved charge transport properties and higher power conversion efficiencies, thus further opening up new avenues for research and innovation in this area of modern semiconductor technology. MDPI 2023-06-29 /pmc/articles/PMC10342843/ /pubmed/37445005 http://dx.doi.org/10.3390/ma16134691 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Morab, Seema
Sundaram, Manickam Minakshi
Pivrikas, Almantas
Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors
title Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors
title_full Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors
title_fullStr Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors
title_full_unstemmed Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors
title_short Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors
title_sort influence of traps and lorentz force on charge transport in organic semiconductors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10342843/
https://www.ncbi.nlm.nih.gov/pubmed/37445005
http://dx.doi.org/10.3390/ma16134691
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