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Electronic Characteristics, Stability and Water Oxidation Selectivity of High-Index BiVO(4) Facets for Photocatalytic Application: A First Principle Study
Some high-index facets of BiVO(4), such as (012), (210), (115), (511), (121), (132) and (231), exhibit much better photocatalytic performance than conventional (010) and (110) surfaces for water splitting. However, the detailed mechanisms and stability of improved photocatalytic performance for thes...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343280/ https://www.ncbi.nlm.nih.gov/pubmed/37446539 http://dx.doi.org/10.3390/nano13132023 |
Sumario: | Some high-index facets of BiVO(4), such as (012), (210), (115), (511), (121), (132) and (231), exhibit much better photocatalytic performance than conventional (010) and (110) surfaces for water splitting. However, the detailed mechanisms and stability of improved photocatalytic performance for these high-index BiVO(4) surfaces are still not clear, which is important for designing photocatalysts with high efficiency. Here, based on first principle calculation, we carried out a systematic theoretical research on BiVO(4) with different surfaces, especially high-index facets. The results show that all of the high-index facets in our calculated systems show an n-type behavior, and the band edge positions indicate that all of the high-index facets have enough ability to produce O(2) without external bias. Electronic structures, band alignments and formation enthalpy indicate that (012), (115) and (132) could be equivalent to (210), (511) and (231), respectively, in the calculation. Oxidation and reduction potential show that only (132)/(231) is stable without strongly oxidative conditions, and the Gibbs free energy indicates that (012)/(210), (115)/(511), (121) and (132)/(231) have lower overpotential than (010) and (110). Our calculation is able to unveil insights into the effects of the surface, including electronic structures, overpotential and stability during the reaction process. |
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