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Single-Charge Tunneling in Codoped Silicon Nanodevices

Silicon (Si) nano-electronics is advancing towards the end of the Moore’s Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors. In the nanostructures that act as channels in transistors or depletion layers in pn diodes, the role of dopants becomes...

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Autores principales: Moraru, Daniel, Kaneko, Tsutomu, Tamura, Yuta, Jupalli, Taruna Teja, Singh, Rohitkumar Shailendra, Pandy, Chitra, Popa, Luminita, Iacomi, Felicia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343285/
https://www.ncbi.nlm.nih.gov/pubmed/37446427
http://dx.doi.org/10.3390/nano13131911
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author Moraru, Daniel
Kaneko, Tsutomu
Tamura, Yuta
Jupalli, Taruna Teja
Singh, Rohitkumar Shailendra
Pandy, Chitra
Popa, Luminita
Iacomi, Felicia
author_facet Moraru, Daniel
Kaneko, Tsutomu
Tamura, Yuta
Jupalli, Taruna Teja
Singh, Rohitkumar Shailendra
Pandy, Chitra
Popa, Luminita
Iacomi, Felicia
author_sort Moraru, Daniel
collection PubMed
description Silicon (Si) nano-electronics is advancing towards the end of the Moore’s Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors. In the nanostructures that act as channels in transistors or depletion layers in pn diodes, the role of dopants becomes critical, since the transport properties depend on a small number of dopants and/or on their random distribution. Here, we present the possibility of single-charge tunneling in codoped Si nanodevices formed in silicon-on-insulator films, in which both phosphorus (P) donors and boron (B) acceptors are introduced intentionally. For highly doped pn diodes, we report band-to-band tunneling (BTBT) via energy states in the depletion layer. These energy states can be ascribed to quantum dots (QDs) formed by the random distribution of donors and acceptors in such a depletion layer. For nanoscale silicon-on-insulator field-effect transistors (SOI-FETs) doped heavily with P-donors and also counter-doped with B-acceptors, we report current peaks and Coulomb diamonds. These features are ascribed to single-electron tunneling (SET) via QDs in the codoped nanoscale channels. These reports provide new insights for utilizing codoped silicon nanostructures for fundamental applications, in which the interplay between donors and acceptors can enhance the functionalities of the devices.
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spelling pubmed-103432852023-07-14 Single-Charge Tunneling in Codoped Silicon Nanodevices Moraru, Daniel Kaneko, Tsutomu Tamura, Yuta Jupalli, Taruna Teja Singh, Rohitkumar Shailendra Pandy, Chitra Popa, Luminita Iacomi, Felicia Nanomaterials (Basel) Article Silicon (Si) nano-electronics is advancing towards the end of the Moore’s Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors. In the nanostructures that act as channels in transistors or depletion layers in pn diodes, the role of dopants becomes critical, since the transport properties depend on a small number of dopants and/or on their random distribution. Here, we present the possibility of single-charge tunneling in codoped Si nanodevices formed in silicon-on-insulator films, in which both phosphorus (P) donors and boron (B) acceptors are introduced intentionally. For highly doped pn diodes, we report band-to-band tunneling (BTBT) via energy states in the depletion layer. These energy states can be ascribed to quantum dots (QDs) formed by the random distribution of donors and acceptors in such a depletion layer. For nanoscale silicon-on-insulator field-effect transistors (SOI-FETs) doped heavily with P-donors and also counter-doped with B-acceptors, we report current peaks and Coulomb diamonds. These features are ascribed to single-electron tunneling (SET) via QDs in the codoped nanoscale channels. These reports provide new insights for utilizing codoped silicon nanostructures for fundamental applications, in which the interplay between donors and acceptors can enhance the functionalities of the devices. MDPI 2023-06-22 /pmc/articles/PMC10343285/ /pubmed/37446427 http://dx.doi.org/10.3390/nano13131911 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Moraru, Daniel
Kaneko, Tsutomu
Tamura, Yuta
Jupalli, Taruna Teja
Singh, Rohitkumar Shailendra
Pandy, Chitra
Popa, Luminita
Iacomi, Felicia
Single-Charge Tunneling in Codoped Silicon Nanodevices
title Single-Charge Tunneling in Codoped Silicon Nanodevices
title_full Single-Charge Tunneling in Codoped Silicon Nanodevices
title_fullStr Single-Charge Tunneling in Codoped Silicon Nanodevices
title_full_unstemmed Single-Charge Tunneling in Codoped Silicon Nanodevices
title_short Single-Charge Tunneling in Codoped Silicon Nanodevices
title_sort single-charge tunneling in codoped silicon nanodevices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343285/
https://www.ncbi.nlm.nih.gov/pubmed/37446427
http://dx.doi.org/10.3390/nano13131911
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