Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD) simulation. In the proposed 1T-DRAM, the 1T-DRAM cell...

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Detalles Bibliográficos
Autores principales: Park, Jin, Lee, Sang-Ho, Kang, Ga-Eon, Heo, Jun-Hyeok, Jeon, So-Ra, Kim, Min-Seok, Bae, Seung-Ji, Hong, Jeong-Woo, Jang, Jae-won, Bae, Jin-Hyuk, Lee, Sin-Hyung, Kang, In-Man
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343341/
https://www.ncbi.nlm.nih.gov/pubmed/37446542
http://dx.doi.org/10.3390/nano13132026

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343341/
https://www.ncbi.nlm.nih.gov/pubmed/37446542
http://dx.doi.org/10.3390/nano13132026

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