Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices

In this paper, we develop fabrication technology and study aluminum films intended for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR. Two-temperature-step quasiepitaxial growth of Al on (111) Si substrate provides a preferentially (111)-oriented Al polycrystalline film and reduc...

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Detalles Bibliográficos
Autores principales: Tarasov, Mikhail, Lomov, Andrey, Chekushkin, Artem, Fominsky, Mikhail, Zakharov, Denis, Tatarintsev, Andrey, Kraevsky, Sergey, Shadrin, Anton
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343352/
https://www.ncbi.nlm.nih.gov/pubmed/37446518
http://dx.doi.org/10.3390/nano13132002

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343352/
https://www.ncbi.nlm.nih.gov/pubmed/37446518
http://dx.doi.org/10.3390/nano13132002

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