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Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar [Formula: see text] InGaN/GaN Multi-Quantum Wells

Surface undulation was formed while growing InGaN/GaN multi-quantum wells on a semi-polar m-plane (1–100) sapphire substrate. Two distinct facets, parallel to [Formula: see text] and [Formula: see text] , were formed in the embedded multi-quantum wells (MQWs). The structural and luminescence charact...

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Detalles Bibliográficos
Autores principales:	Sheen, Mi-Hyang, Lee, Yong-Hee, Jang, Jongjin, Baek, Jongwoo, Nam, Okhyun, Yang, Cheol-Woong, Kim, Young-Woon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Communication
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343590/ https://www.ncbi.nlm.nih.gov/pubmed/37446462 http://dx.doi.org/10.3390/nano13131946

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