Making Sense of the Growth Behavior of Ultra-High Magnetic Gd(2)-Doped Silicon Clusters

The growth behavior, stability, electronic and magnetic properties of the Gd(2)Si(n)(−) (n = 3–12) clusters are reported, which are investigated using density functional theory calculations combined with the Saunders ‘Kick’ and the Artificial Bee Colony algorithm. The lowest-lying structures of Gd(2)Si(n)(−) (n = 3–12) are all exohedral structures with two Gd atoms face-capping the Si(n) frameworks. Results show that the pentagonal bipyramid (PB) shape is the basic framework for the nascent growth process of the present clusters, and forming the PB structure begins with n = 5. The Gd(2)Si(5)(−) is the potential magic cluster due to significantly higher average binding energies and second order difference energies, which can also be further verified by localized orbital locator and adaptive natural density partitioning methods. Moreover, the localized f-electron can be observed by natural atomic orbital analysis, implying that these electrons are not affected by the pure silicon atoms and scarcely participate in bonding. Hence, the implantation of these elements into a silicon substrate could present a potential alternative strategy for designing and synthesizing rare earth magnetic silicon-based materials.