Implementation of Highly Stable Memristive Characteristics in an Organic–Inorganic Hybrid Resistive Switching Layer of Chitosan-Titanium Oxide with Microwave-Assisted Oxidation

This study proposes a high-performance organic–inorganic hybrid memristor for the development of neuromorphic devices in the memristor-based artificial synapse. The memristor consists of a solid polymer electrolyte (SPE) chitosan layer and a titanium oxide (TiO(x)) layer grown with a low-thermal-budget, microwave-assisted oxidation. The fabricated Ti/SPE–chitosan/TiO(x)/Pt-structured memristor exhibited steady bipolar resistive switching (BRS) characteristics and demonstrated excellent endurance in 100-cycle repetition tests. Compared to SPE–chitosan memristors without a TiO(x) layer, the proposed organic–inorganic hybrid memristor demonstrated a higher dynamic range and a higher response to pre-synaptic stimuli such as short-term plasticity via paired-pulse facilitation. The effect of adding the TiO(x) layer on the BRS properties was examined, and the results showed that the TiO(x) layer improved the chemical and electrical superiority of the proposed memristor synaptic device. The proposed SPE–chitosan organic–inorganic hybrid memristor also exhibited a stable spike-timing-dependent plasticity, which closely mimics long-term plasticity. The potentiation and depression behaviors that modulate synaptic weights operated stably via repeated spike cycle tests. Therefore, the proposed SPE–chitosan organic–inorganic hybrid memristor is a promising candidate for the development of neuromorphic devices in memristor-based artificial synapses owing to its excellent stability, high dynamic range, and superior response to pre-synaptic stimuli.