Cargando…
Implementation of Highly Stable Memristive Characteristics in an Organic–Inorganic Hybrid Resistive Switching Layer of Chitosan-Titanium Oxide with Microwave-Assisted Oxidation
This study proposes a high-performance organic–inorganic hybrid memristor for the development of neuromorphic devices in the memristor-based artificial synapse. The memristor consists of a solid polymer electrolyte (SPE) chitosan layer and a titanium oxide (TiO(x)) layer grown with a low-thermal-bud...
Autores principales: | Lee, Dong-Hee, Park, Hamin, Cho, Won-Ju |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10343703/ https://www.ncbi.nlm.nih.gov/pubmed/37446836 http://dx.doi.org/10.3390/molecules28135174 |
Ejemplares similares
-
Models of
Polaron Transport in Inorganic and Hybrid
Organic–Inorganic Titanium Oxides
por: Morita, Kazuki, et al.
Publicado: (2023) -
Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures
por: Tominov, Roman V., et al.
Publicado: (2022) -
Electrically controlled transformation of memristive titanates into mesoporous titanium oxides via incongruent sublimation
por: Rodenbücher, C., et al.
Publicado: (2018) -
Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors
por: Li, Lei
Publicado: (2020) -
Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device
por: Kang, Wonkyu, et al.
Publicado: (2021)