Optimization of Ternary In(x)Ga(1-x)N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Red, green, and blue light In(x)Ga(1−x)N multiple quantum wells have been grown on GaN/γ-LiAlO(2) microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In(x)Ga(1-x)N multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In(x)Ga(1-x)N) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In(x)Ga(1-x)N-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.