A High-Performance MoS(2)-Based Visible–Near-Infrared Photodetector from Gateless Photogating Effect Induced by Nickel Nanoparticles

Recent advancements in two-dimensional materials have shown huge potential for optoelectronic applications. It is challenging to achieve highly effective and sensitive broadband photodetection based on MoS(2) devices. Defect engineering, such as introducing vacancies, can narrow the bandgap and boost the separation of photogenerated carriers by defect states but leads to a slow response speed. Herein, we propose a nickel nanoparticle-induced gateless photogating effect with a unique energy band structure to enable the application of defect engineering and achieve high optoelectronic performance. The device based on Ni nanoparticle-decorated MoS(2) with S vacancies exhibited high responsivities of 106.21 and 1.38 A W(−1) and detectivities of 1.9 × 10(12) and 8.9 × 10(9) Jones under 532 and 980 nm illumination (visible to near infrared), respectively, with highly accelerated response speed. This strategy provides new insight into optimizing defect engineering to design high-performance optoelectronic devices capable of broadband photodetection.