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Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances

The incubation of strained nano-system in the form of tri-layered structure as nanowire channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for the first time to keep abreast with the proposed 3 nm technology node of IRDS 2022. The system installs Type-II hetero-s...

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Detalles Bibliográficos
Autores principales:	Barik, Rasmita, Dhar, Rudra Sankar, Awwad, Falah, Hussein, Mousa I.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10349044/ https://www.ncbi.nlm.nih.gov/pubmed/37452048 http://dx.doi.org/10.1038/s41598-023-38239-x

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