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Ultrafast Infrared-to-Visible Photon Upconversion on Plasmon/TiO(2) Solid Films

[Image: see text] Optical upconversion via a multiphoton absorption process converts incoherent low-energy photons to shorter wavelengths. In this contribution, we report a solid-state thin film for infrared-to-visible upconversion composed of plasmonic/TiO(2) interfaces. When excited at λ = 800 nm,...

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Detalles Bibliográficos
Autores principales: Zou, Xianshao, Bericat Vadell, Robert, Cai, Bin, Geng, Xinjian, Dey, Ananta, Liu, Yawen, Gudmundsson, Axel, Meng, Jie, Sá, Jacinto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10350964/
https://www.ncbi.nlm.nih.gov/pubmed/37390337
http://dx.doi.org/10.1021/acs.jpclett.3c01208
Descripción
Sumario:[Image: see text] Optical upconversion via a multiphoton absorption process converts incoherent low-energy photons to shorter wavelengths. In this contribution, we report a solid-state thin film for infrared-to-visible upconversion composed of plasmonic/TiO(2) interfaces. When excited at λ = 800 nm, three photons are absorbed, leading to the excitation of TiO(2) trap states into an emissive state in the visible domain. The plasmonic nanoparticle enhances the light absorption capabilities of the semiconductor, increasing emission efficiency by 20 times. We demonstrate that the plasmonic nanoparticle only changes the optical absorption of the semiconductor; i.e., the process is purely photonic. The process occurs in the ultrafast domain (<10 ps), contrasting with molecular triplet–triplet exciton annihilation, the commonly used method in photon upconversion, in the nano- to microsecond time scales. The process utilizes pre-existing trap states within the semiconductor bandgap and involves three-photon absorption.