Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction

This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect transistor. It comprises a dual doping-less tunneling junction that lies above an n(+) drain region. By employing the wet-etching technique, two cavities are carved in the gate dielectric, and with the entry of various biomolecules into the cavities, the electrostatic integrity of the gate changes, accordingly. Numerical simulations, carried out by the Silvaco ATLAS device simulator, show that including trap-assisted tunneling significantly modulate the biosensor's main parameters, such as on-state current, subthreshold swing, and transconductance and their corresponding sensitivities. We also evaluate the effect of semi-filled cavities on our proposed biosensor’s performance with various configurations. The FOMs like I(on)/I(off) = 2.04 × 10(6), [Formula: see text] =1.48 × 10(5), and [Formula: see text] =0.61 in the presence of TAT show that our proposed biosensor has a promising performance.