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Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning

Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene inse...

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Autores principales: Hong, Sungjae, Hong, Chang-Ui, Lee, Sol, Jang, Myeongjin, Jang, Chorom, Lee, Yangjin, Widiapradja, Livia Janice, Park, Sam, Kim, Kwanpyo, Son, Young-Woo, Yook, Jong-Gwan, Im, Seongil
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10355828/
https://www.ncbi.nlm.nih.gov/pubmed/37467332
http://dx.doi.org/10.1126/sciadv.adh9770
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author Hong, Sungjae
Hong, Chang-Ui
Lee, Sol
Jang, Myeongjin
Jang, Chorom
Lee, Yangjin
Widiapradja, Livia Janice
Park, Sam
Kim, Kwanpyo
Son, Young-Woo
Yook, Jong-Gwan
Im, Seongil
author_facet Hong, Sungjae
Hong, Chang-Ui
Lee, Sol
Jang, Myeongjin
Jang, Chorom
Lee, Yangjin
Widiapradja, Livia Janice
Park, Sam
Kim, Kwanpyo
Son, Young-Woo
Yook, Jong-Gwan
Im, Seongil
author_sort Hong, Sungjae
collection PubMed
description Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene insertion at ultrahigh frequencies has rarely been considered. Here, we demonstrate the diode operation of vertical Pt/n-MoSe(2)/graphene/Au assemblies at ~200-GHz cutoff frequency (f(C)). The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies due to graphene quantum capacitance–induced delay, so that the Ohmic graphene/MoSe(2) junction may be transformed to a pinning-free Schottky junction. Our diodes exhibit much lower total capacitance than devices without graphene insertion, deriving an order of magnitude higher f(C), which clearly demonstrates the merit of graphene at high frequencies.
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spelling pubmed-103558282023-07-20 Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning Hong, Sungjae Hong, Chang-Ui Lee, Sol Jang, Myeongjin Jang, Chorom Lee, Yangjin Widiapradja, Livia Janice Park, Sam Kim, Kwanpyo Son, Young-Woo Yook, Jong-Gwan Im, Seongil Sci Adv Physical and Materials Sciences Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene insertion at ultrahigh frequencies has rarely been considered. Here, we demonstrate the diode operation of vertical Pt/n-MoSe(2)/graphene/Au assemblies at ~200-GHz cutoff frequency (f(C)). The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies due to graphene quantum capacitance–induced delay, so that the Ohmic graphene/MoSe(2) junction may be transformed to a pinning-free Schottky junction. Our diodes exhibit much lower total capacitance than devices without graphene insertion, deriving an order of magnitude higher f(C), which clearly demonstrates the merit of graphene at high frequencies. American Association for the Advancement of Science 2023-07-19 /pmc/articles/PMC10355828/ /pubmed/37467332 http://dx.doi.org/10.1126/sciadv.adh9770 Text en Copyright © 2023 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). https://creativecommons.org/licenses/by-nc/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Physical and Materials Sciences
Hong, Sungjae
Hong, Chang-Ui
Lee, Sol
Jang, Myeongjin
Jang, Chorom
Lee, Yangjin
Widiapradja, Livia Janice
Park, Sam
Kim, Kwanpyo
Son, Young-Woo
Yook, Jong-Gwan
Im, Seongil
Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
title Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
title_full Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
title_fullStr Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
title_full_unstemmed Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
title_short Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
title_sort ultrafast van der waals diode using graphene quantum capacitance and fermi-level depinning
topic Physical and Materials Sciences
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10355828/
https://www.ncbi.nlm.nih.gov/pubmed/37467332
http://dx.doi.org/10.1126/sciadv.adh9770
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