Vertically grown ultrathin Bi(2)SiO(5) as high-κ single-crystalline gate dielectric

Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films...

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Detalles Bibliográficos
Autores principales: Chen, Jiabiao, Liu, Zhaochao, Dong, Xinyue, Gao, Zhansheng, Lin, Yuxuan, He, Yuyu, Duan, Yingnan, Cheng, Tonghuai, Zhou, Zhengyang, Fu, Huixia, Luo, Feng, Wu, Jinxiong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10361963/
https://www.ncbi.nlm.nih.gov/pubmed/37479692
http://dx.doi.org/10.1038/s41467-023-40123-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10361963/
https://www.ncbi.nlm.nih.gov/pubmed/37479692
http://dx.doi.org/10.1038/s41467-023-40123-1

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