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Vertically grown ultrathin Bi(2)SiO(5) as high-κ single-crystalline gate dielectric
Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films...
| Autores principales: | , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10361963/ https://www.ncbi.nlm.nih.gov/pubmed/37479692 http://dx.doi.org/10.1038/s41467-023-40123-1 |