Cargando…

Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide

[Image: see text] Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS(2) by annealing at 600 °C in...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhu, Yiru, Lim, Juhwan, Zhang, Zhepeng, Wang, Yan, Sarkar, Soumya, Ramsden, Hugh, Li, Yang, Yan, Han, Phuyal, Dibya, Gauriot, Nicolas, Rao, Akshay, Hoye, Robert L. Z., Eda, Goki, Chhowalla, Manish
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10373523/
https://www.ncbi.nlm.nih.gov/pubmed/37418552
http://dx.doi.org/10.1021/acsnano.3c02103
_version_ 1785078586769670144
author Zhu, Yiru
Lim, Juhwan
Zhang, Zhepeng
Wang, Yan
Sarkar, Soumya
Ramsden, Hugh
Li, Yang
Yan, Han
Phuyal, Dibya
Gauriot, Nicolas
Rao, Akshay
Hoye, Robert L. Z.
Eda, Goki
Chhowalla, Manish
author_facet Zhu, Yiru
Lim, Juhwan
Zhang, Zhepeng
Wang, Yan
Sarkar, Soumya
Ramsden, Hugh
Li, Yang
Yan, Han
Phuyal, Dibya
Gauriot, Nicolas
Rao, Akshay
Hoye, Robert L. Z.
Eda, Goki
Chhowalla, Manish
author_sort Zhu, Yiru
collection PubMed
description [Image: see text] Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS(2) by annealing at 600 °C in an argon/hydrogen (95%/5%) atmosphere. Synchrotron X-ray photoelectron spectroscopy shows that a Mo 3d(5/2) core peak at 230.1 eV emerges in the annealed MoS(2) associated with nonstoichiometric MoS(x) (0 < x < 2), and Raman spectroscopy shows an enhancement of the ∼380 cm(–1) peak that is attributed to sulfur vacancies. At sulfur vacancy densities of ∼1.8 × 10(14) cm(–2), we observe a defect peak at ∼1.72 eV (referred to as LX(D)) at room temperature in the photoluminescence (PL) spectrum. The LX(D) peak is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LX(D) emission is longer than that of band edge excitons, both at room and low temperatures (∼2.44 ns at 8 K). The LX(D) peak can be suppressed by annealing the defective MoS(2) in sulfur vapor, which indicates that it is possible to passivate the vacancies. Our results provide insights into how excitonic and defect-mediated PL emissions in MoS(2) are influenced by sulfur vacancies at room and low temperatures.
format Online
Article
Text
id pubmed-10373523
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-103735232023-07-28 Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide Zhu, Yiru Lim, Juhwan Zhang, Zhepeng Wang, Yan Sarkar, Soumya Ramsden, Hugh Li, Yang Yan, Han Phuyal, Dibya Gauriot, Nicolas Rao, Akshay Hoye, Robert L. Z. Eda, Goki Chhowalla, Manish ACS Nano [Image: see text] Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS(2) by annealing at 600 °C in an argon/hydrogen (95%/5%) atmosphere. Synchrotron X-ray photoelectron spectroscopy shows that a Mo 3d(5/2) core peak at 230.1 eV emerges in the annealed MoS(2) associated with nonstoichiometric MoS(x) (0 < x < 2), and Raman spectroscopy shows an enhancement of the ∼380 cm(–1) peak that is attributed to sulfur vacancies. At sulfur vacancy densities of ∼1.8 × 10(14) cm(–2), we observe a defect peak at ∼1.72 eV (referred to as LX(D)) at room temperature in the photoluminescence (PL) spectrum. The LX(D) peak is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LX(D) emission is longer than that of band edge excitons, both at room and low temperatures (∼2.44 ns at 8 K). The LX(D) peak can be suppressed by annealing the defective MoS(2) in sulfur vapor, which indicates that it is possible to passivate the vacancies. Our results provide insights into how excitonic and defect-mediated PL emissions in MoS(2) are influenced by sulfur vacancies at room and low temperatures. American Chemical Society 2023-07-07 /pmc/articles/PMC10373523/ /pubmed/37418552 http://dx.doi.org/10.1021/acsnano.3c02103 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Zhu, Yiru
Lim, Juhwan
Zhang, Zhepeng
Wang, Yan
Sarkar, Soumya
Ramsden, Hugh
Li, Yang
Yan, Han
Phuyal, Dibya
Gauriot, Nicolas
Rao, Akshay
Hoye, Robert L. Z.
Eda, Goki
Chhowalla, Manish
Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide
title Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide
title_full Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide
title_fullStr Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide
title_full_unstemmed Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide
title_short Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide
title_sort room-temperature photoluminescence mediated by sulfur vacancies in 2d molybdenum disulfide
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10373523/
https://www.ncbi.nlm.nih.gov/pubmed/37418552
http://dx.doi.org/10.1021/acsnano.3c02103
work_keys_str_mv AT zhuyiru roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT limjuhwan roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT zhangzhepeng roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT wangyan roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT sarkarsoumya roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT ramsdenhugh roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT liyang roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT yanhan roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT phuyaldibya roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT gauriotnicolas roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT raoakshay roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT hoyerobertlz roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT edagoki roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide
AT chhowallamanish roomtemperaturephotoluminescencemediatedbysulfurvacanciesin2dmolybdenumdisulfide