Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum,...

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Detalles Bibliográficos
Autores principales: Hsiao, Fu-He, Lee, Tzu-Yi, Miao, Wen-Chien, Pai, Yi-Hua, Iida, Daisuke, Lin, Chun-Liang, Chen, Fang-Chung, Chow, Chi-Wai, Lin, Chien-Chung, Horng, Ray-Hua, He, Jr-Hau, Ohkawa, Kazuhiro, Hong, Yu-Heng, Chang, Chiao-Yun, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10374497/
https://www.ncbi.nlm.nih.gov/pubmed/37498403
http://dx.doi.org/10.1186/s11671-023-03871-z
Descripción
Sumario:In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm(2). These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

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