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Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentratio...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10374539/ https://www.ncbi.nlm.nih.gov/pubmed/37500640 http://dx.doi.org/10.1038/s41467-023-40157-5 |