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Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer

In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the...

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Autores principales: Parajuli, D., KC, Devendra, Khattri, Khim B., Adhikari, Dipak Raj, Gaib, Raid Anam, Shah, Deb Kumar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10374893/
https://www.ncbi.nlm.nih.gov/pubmed/37500703
http://dx.doi.org/10.1038/s41598-023-38906-z
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author Parajuli, D.
KC, Devendra
Khattri, Khim B.
Adhikari, Dipak Raj
Gaib, Raid Anam
Shah, Deb Kumar
author_facet Parajuli, D.
KC, Devendra
Khattri, Khim B.
Adhikari, Dipak Raj
Gaib, Raid Anam
Shah, Deb Kumar
author_sort Parajuli, D.
collection PubMed
description In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 =  − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (I(sc)) = 1.72 A, open-circuit voltage (V(oc)) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
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spelling pubmed-103748932023-07-29 Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer Parajuli, D. KC, Devendra Khattri, Khim B. Adhikari, Dipak Raj Gaib, Raid Anam Shah, Deb Kumar Sci Rep Article In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 =  − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (I(sc)) = 1.72 A, open-circuit voltage (V(oc)) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable. Nature Publishing Group UK 2023-07-27 /pmc/articles/PMC10374893/ /pubmed/37500703 http://dx.doi.org/10.1038/s41598-023-38906-z Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Parajuli, D.
KC, Devendra
Khattri, Khim B.
Adhikari, Dipak Raj
Gaib, Raid Anam
Shah, Deb Kumar
Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer
title Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer
title_full Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer
title_fullStr Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer
title_full_unstemmed Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer
title_short Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer
title_sort numerical assessment of optoelectrical properties of znse–cdse solar cell-based with zno antireflection coating layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10374893/
https://www.ncbi.nlm.nih.gov/pubmed/37500703
http://dx.doi.org/10.1038/s41598-023-38906-z
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