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Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures

A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-inf...

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Autores principales: Yang, Bo, Yu, Yizhen, Zhang, Guixue, Shao, Xiumei, Li, Xue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383097/
https://www.ncbi.nlm.nih.gov/pubmed/37514850
http://dx.doi.org/10.3390/s23146556
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author Yang, Bo
Yu, Yizhen
Zhang, Guixue
Shao, Xiumei
Li, Xue
author_facet Yang, Bo
Yu, Yizhen
Zhang, Guixue
Shao, Xiumei
Li, Xue
author_sort Yang, Bo
collection PubMed
description A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly controllable property of electromagnetic wave manipulation. Broadband Mie resonator arrays, such as nanocones and nanopillars designed with FDTD methods, were integrated on a back-illuminated InGaAs FPA as an AR metasurface. The visible–extended InGaAs detector was fabricated using substrate removal technology. The nanostructures integrated into the Vis-SWIR InGaAs detectors could realize a 10–20% enhanced quantum efficiency and an 18.8% higher FPA response throughout the wavelength range of 500–1700 nm. Compared with the traditional AR coating, nanostructure integration has advantages, such as broadband high responsivity and omnidirection antireflection, as a promising route for future Vis-SWIR InGaAs detectors with higher image quality.
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spelling pubmed-103830972023-07-30 Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures Yang, Bo Yu, Yizhen Zhang, Guixue Shao, Xiumei Li, Xue Sensors (Basel) Perspective A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly controllable property of electromagnetic wave manipulation. Broadband Mie resonator arrays, such as nanocones and nanopillars designed with FDTD methods, were integrated on a back-illuminated InGaAs FPA as an AR metasurface. The visible–extended InGaAs detector was fabricated using substrate removal technology. The nanostructures integrated into the Vis-SWIR InGaAs detectors could realize a 10–20% enhanced quantum efficiency and an 18.8% higher FPA response throughout the wavelength range of 500–1700 nm. Compared with the traditional AR coating, nanostructure integration has advantages, such as broadband high responsivity and omnidirection antireflection, as a promising route for future Vis-SWIR InGaAs detectors with higher image quality. MDPI 2023-07-20 /pmc/articles/PMC10383097/ /pubmed/37514850 http://dx.doi.org/10.3390/s23146556 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Perspective
Yang, Bo
Yu, Yizhen
Zhang, Guixue
Shao, Xiumei
Li, Xue
Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures
title Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures
title_full Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures
title_fullStr Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures
title_full_unstemmed Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures
title_short Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures
title_sort design and fabrication of broadband ingaas detectors integrated with nanostructures
topic Perspective
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383097/
https://www.ncbi.nlm.nih.gov/pubmed/37514850
http://dx.doi.org/10.3390/s23146556
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