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Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability

The topological insulator 2D Bi(2)Se(3) is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi(2)Se(3) is prone to oxidation. Surface passivation using ligand agents after Bi(2)Se(3) exfoliation works well...

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Autores principales: Chen, Jiayi, Wu, Guodong, Ding, Yamei, Chen, Qichao, Gao, Wenya, Zhang, Tuo, Jing, Xu, Lin, Huiwen, Xue, Feng, Tao, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383381/
https://www.ncbi.nlm.nih.gov/pubmed/37513067
http://dx.doi.org/10.3390/nano13142056
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author Chen, Jiayi
Wu, Guodong
Ding, Yamei
Chen, Qichao
Gao, Wenya
Zhang, Tuo
Jing, Xu
Lin, Huiwen
Xue, Feng
Tao, Li
author_facet Chen, Jiayi
Wu, Guodong
Ding, Yamei
Chen, Qichao
Gao, Wenya
Zhang, Tuo
Jing, Xu
Lin, Huiwen
Xue, Feng
Tao, Li
author_sort Chen, Jiayi
collection PubMed
description The topological insulator 2D Bi(2)Se(3) is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi(2)Se(3) is prone to oxidation. Surface passivation using ligand agents after Bi(2)Se(3) exfoliation works well to protect the surface, but the process is time-consuming and technically challenging; a passivation agent that is stable under a highly biased potential is significant for in situ passivation of the Bi(2)Se(3) surface. In this work, the roles of halide anions (Cl(−), Br(−), and I(−)) in respect of the chemical properties of synthetic Bi(2)Se(3) nanosheets during electrochemical intercalated exfoliation were investigated to determine the antioxidation capacity. It was found that Bi(2)Se(3) nanosheets prepared in a solution of tetrabutylammonium chloride (TBA(+) and Cl(−)) have the best oxidation resistance via the surface bonding of Bi with Cl, which promotes obtaining better device stability. This work paves an avenue for adjusting the components of the electrolyte to further promote the stability of 2D Bi(2)Se(3)-nanosheet-based electronic devices.
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spelling pubmed-103833812023-07-30 Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability Chen, Jiayi Wu, Guodong Ding, Yamei Chen, Qichao Gao, Wenya Zhang, Tuo Jing, Xu Lin, Huiwen Xue, Feng Tao, Li Nanomaterials (Basel) Article The topological insulator 2D Bi(2)Se(3) is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi(2)Se(3) is prone to oxidation. Surface passivation using ligand agents after Bi(2)Se(3) exfoliation works well to protect the surface, but the process is time-consuming and technically challenging; a passivation agent that is stable under a highly biased potential is significant for in situ passivation of the Bi(2)Se(3) surface. In this work, the roles of halide anions (Cl(−), Br(−), and I(−)) in respect of the chemical properties of synthetic Bi(2)Se(3) nanosheets during electrochemical intercalated exfoliation were investigated to determine the antioxidation capacity. It was found that Bi(2)Se(3) nanosheets prepared in a solution of tetrabutylammonium chloride (TBA(+) and Cl(−)) have the best oxidation resistance via the surface bonding of Bi with Cl, which promotes obtaining better device stability. This work paves an avenue for adjusting the components of the electrolyte to further promote the stability of 2D Bi(2)Se(3)-nanosheet-based electronic devices. MDPI 2023-07-12 /pmc/articles/PMC10383381/ /pubmed/37513067 http://dx.doi.org/10.3390/nano13142056 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chen, Jiayi
Wu, Guodong
Ding, Yamei
Chen, Qichao
Gao, Wenya
Zhang, Tuo
Jing, Xu
Lin, Huiwen
Xue, Feng
Tao, Li
Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability
title Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability
title_full Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability
title_fullStr Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability
title_full_unstemmed Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability
title_short Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability
title_sort antioxidative 2d bismuth selenide via halide passivation for enhanced device stability
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383381/
https://www.ncbi.nlm.nih.gov/pubmed/37513067
http://dx.doi.org/10.3390/nano13142056
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