Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability

The topological insulator 2D Bi(2)Se(3) is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi(2)Se(3) is prone to oxidation. Surface passivation using ligand agents after Bi(2)Se(3) exfoliation works well...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Jiayi, Wu, Guodong, Ding, Yamei, Chen, Qichao, Gao, Wenya, Zhang, Tuo, Jing, Xu, Lin, Huiwen, Xue, Feng, Tao, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383381/
https://www.ncbi.nlm.nih.gov/pubmed/37513067
http://dx.doi.org/10.3390/nano13142056

Ejemplares similares

Ejemplares similares