A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications

The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE). Therefore, a 12T SRAM-hardened circuit (RHB-12T cell) for the soft error recovery is proposed using the radiation hardening design (RHBD) conc...

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Detalles Bibliográficos
Autores principales: Yao, Ruxue, Lv, Hongliang, Zhang, Yuming, Chen, Xu, Zhang, Yutao, Liu, Xingming, Bai, Geng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383575/
https://www.ncbi.nlm.nih.gov/pubmed/37512616
http://dx.doi.org/10.3390/mi14071305

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383575/
https://www.ncbi.nlm.nih.gov/pubmed/37512616
http://dx.doi.org/10.3390/mi14071305

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