Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses

The performance requirements for power devices in airborne equipment are increasingly demanding, while environmental and working stresses are becoming more diverse. The degradation mechanisms of devices subjected to multiple stresses become more complex. Most proposed degradation mechanisms and mode...

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Detalles Bibliográficos
Autores principales: Dong, Huifen, Wu, Yunxia, Li, Chan, Xu, Hai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384136/
https://www.ncbi.nlm.nih.gov/pubmed/37512783
http://dx.doi.org/10.3390/mi14071469

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384136/
https://www.ncbi.nlm.nih.gov/pubmed/37512783
http://dx.doi.org/10.3390/mi14071469

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