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Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses
The performance requirements for power devices in airborne equipment are increasingly demanding, while environmental and working stresses are becoming more diverse. The degradation mechanisms of devices subjected to multiple stresses become more complex. Most proposed degradation mechanisms and mode...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384136/ https://www.ncbi.nlm.nih.gov/pubmed/37512783 http://dx.doi.org/10.3390/mi14071469 |