Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs

Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, [Formula: see text] (approximately [Formula: see text]), which marks the metal insulator transition (MIT). In close proximity to the [Formula: see text] , the conductivity exhibits a linear dependence on the temperature (T). By examining the extrapolated conductivity at the absolute zero temperature (T = 0), denoted as [Formula: see text] , as a function of the electron density [Formula: see text] , we identify two distinct regimes with varying [Formula: see text] patterns, indicating the existence of two different phases. The transition from one of these two regimes to another, coinciding with [Formula: see text] , is abrupt and serves as the focus of our investigation. Our aim is to establish the possibility of a percolation type transition in the 2D-Si-MOSFETs’ sample. In fact, we observed that the model of percolation is applicable only for densities very close to [Formula: see text] (where [Formula: see text] is the linear extrapolation of [Formula: see text]), indicating the percolation type transition essentially represents a phase transition at the zero temperature.