Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs

Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, [Formula: see text] (approximately [Formula: see text]), which marks the metal insulator transition (MIT). In close proximity to the [Formula: see text...

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Detalles Bibliográficos
Autores principales: Elmourabit, F., Dlimi, S., El Moutaouakil, A., Id Ouissaaden, F., Khoukh, A., Limouny, L., Elkhatat, H., El Kaaouachi, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384344/
https://www.ncbi.nlm.nih.gov/pubmed/37513058
http://dx.doi.org/10.3390/nano13142047

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384344/
https://www.ncbi.nlm.nih.gov/pubmed/37513058
http://dx.doi.org/10.3390/nano13142047

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