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Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs
Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, [Formula: see text] (approximately [Formula: see text]), which marks the metal insulator transition (MIT). In close proximity to the [Formula: see text...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384344/ https://www.ncbi.nlm.nih.gov/pubmed/37513058 http://dx.doi.org/10.3390/nano13142047 |