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Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor
This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the propose...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385197/ https://www.ncbi.nlm.nih.gov/pubmed/37514650 http://dx.doi.org/10.3390/s23146356 |
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author | Yue, Xin Fossum, Eric R. |
author_facet | Yue, Xin Fossum, Eric R. |
author_sort | Yue, Xin |
collection | PubMed |
description | This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the proposed pixels achieve a charge transfer time of less than 10 ns without requiring any process modifications. Moreover, the gate structure significantly reduces the floating diffusion capacitance, resulting in an increased conversion gain of 183 µV/e−. This advancement enables the image sensor to achieve the lowest reported noise of 5.1 e− rms. To demonstrate the effectiveness of both optimizations, a proof-of-concept CMOS image sensor is designed, taped-out and characterized. |
format | Online Article Text |
id | pubmed-10385197 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-103851972023-07-30 Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor Yue, Xin Fossum, Eric R. Sensors (Basel) Article This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the proposed pixels achieve a charge transfer time of less than 10 ns without requiring any process modifications. Moreover, the gate structure significantly reduces the floating diffusion capacitance, resulting in an increased conversion gain of 183 µV/e−. This advancement enables the image sensor to achieve the lowest reported noise of 5.1 e− rms. To demonstrate the effectiveness of both optimizations, a proof-of-concept CMOS image sensor is designed, taped-out and characterized. MDPI 2023-07-13 /pmc/articles/PMC10385197/ /pubmed/37514650 http://dx.doi.org/10.3390/s23146356 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yue, Xin Fossum, Eric R. Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor |
title | Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor |
title_full | Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor |
title_fullStr | Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor |
title_full_unstemmed | Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor |
title_short | Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor |
title_sort | design and characterization of a burst mode 20 mfps low noise cmos image sensor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385197/ https://www.ncbi.nlm.nih.gov/pubmed/37514650 http://dx.doi.org/10.3390/s23146356 |
work_keys_str_mv | AT yuexin designandcharacterizationofaburstmode20mfpslownoisecmosimagesensor AT fossumericr designandcharacterizationofaburstmode20mfpslownoisecmosimagesensor |