Cargando…

Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor

This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the propose...

Descripción completa

Detalles Bibliográficos
Autores principales: Yue, Xin, Fossum, Eric R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385197/
https://www.ncbi.nlm.nih.gov/pubmed/37514650
http://dx.doi.org/10.3390/s23146356
_version_ 1785081345763966976
author Yue, Xin
Fossum, Eric R.
author_facet Yue, Xin
Fossum, Eric R.
author_sort Yue, Xin
collection PubMed
description This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the proposed pixels achieve a charge transfer time of less than 10 ns without requiring any process modifications. Moreover, the gate structure significantly reduces the floating diffusion capacitance, resulting in an increased conversion gain of 183 µV/e−. This advancement enables the image sensor to achieve the lowest reported noise of 5.1 e− rms. To demonstrate the effectiveness of both optimizations, a proof-of-concept CMOS image sensor is designed, taped-out and characterized.
format Online
Article
Text
id pubmed-10385197
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-103851972023-07-30 Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor Yue, Xin Fossum, Eric R. Sensors (Basel) Article This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the proposed pixels achieve a charge transfer time of less than 10 ns without requiring any process modifications. Moreover, the gate structure significantly reduces the floating diffusion capacitance, resulting in an increased conversion gain of 183 µV/e−. This advancement enables the image sensor to achieve the lowest reported noise of 5.1 e− rms. To demonstrate the effectiveness of both optimizations, a proof-of-concept CMOS image sensor is designed, taped-out and characterized. MDPI 2023-07-13 /pmc/articles/PMC10385197/ /pubmed/37514650 http://dx.doi.org/10.3390/s23146356 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yue, Xin
Fossum, Eric R.
Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor
title Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor
title_full Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor
title_fullStr Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor
title_full_unstemmed Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor
title_short Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor
title_sort design and characterization of a burst mode 20 mfps low noise cmos image sensor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385197/
https://www.ncbi.nlm.nih.gov/pubmed/37514650
http://dx.doi.org/10.3390/s23146356
work_keys_str_mv AT yuexin designandcharacterizationofaburstmode20mfpslownoisecmosimagesensor
AT fossumericr designandcharacterizationofaburstmode20mfpslownoisecmosimagesensor