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Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor

This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the propose...

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Detalles Bibliográficos
Autores principales:	Yue, Xin, Fossum, Eric R.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385197/ https://www.ncbi.nlm.nih.gov/pubmed/37514650 http://dx.doi.org/10.3390/s23146356

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