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Performance Analysis of an α-Graphyne Nano-Field Effect Transistor

Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing. In this study, we focused on achieving these goals and studied the electronic properties of α-...

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Autores principales: Khan, Habibullah, Islam, Md. Monirul, Roya, Rajnin Imran, Azad, Sariha Noor, Alam, Mahbub
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385303/
https://www.ncbi.nlm.nih.gov/pubmed/37512696
http://dx.doi.org/10.3390/mi14071385
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author Khan, Habibullah
Islam, Md. Monirul
Roya, Rajnin Imran
Azad, Sariha Noor
Alam, Mahbub
author_facet Khan, Habibullah
Islam, Md. Monirul
Roya, Rajnin Imran
Azad, Sariha Noor
Alam, Mahbub
author_sort Khan, Habibullah
collection PubMed
description Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing. In this study, we focused on achieving these goals and studied the electronic properties of α-graphyne nanoribbons. We simulated the transfer and output characteristics of an α-graphyne ballistic nanoribbon FET. We used the tight-binding model with nearest-neighbor approximation to obtain the band structure which gives the same band structure as the one found from the DFT. In order to simulate the I-V characteristics of the transistor we used the non-equilibrium Green’s function (NEGF) formalism. The results show that the modeled FET can provide a high Ion/Ioff ratio and low subthreshold swing. We also studied the effects of defects as defects cannot be avoided in any practical device. The study shows that the Ion/Ioff ratio and subthreshold swing improves as defects are added, but the delay time and dynamic power dissipation worsen.
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spelling pubmed-103853032023-07-30 Performance Analysis of an α-Graphyne Nano-Field Effect Transistor Khan, Habibullah Islam, Md. Monirul Roya, Rajnin Imran Azad, Sariha Noor Alam, Mahbub Micromachines (Basel) Article Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing. In this study, we focused on achieving these goals and studied the electronic properties of α-graphyne nanoribbons. We simulated the transfer and output characteristics of an α-graphyne ballistic nanoribbon FET. We used the tight-binding model with nearest-neighbor approximation to obtain the band structure which gives the same band structure as the one found from the DFT. In order to simulate the I-V characteristics of the transistor we used the non-equilibrium Green’s function (NEGF) formalism. The results show that the modeled FET can provide a high Ion/Ioff ratio and low subthreshold swing. We also studied the effects of defects as defects cannot be avoided in any practical device. The study shows that the Ion/Ioff ratio and subthreshold swing improves as defects are added, but the delay time and dynamic power dissipation worsen. MDPI 2023-07-06 /pmc/articles/PMC10385303/ /pubmed/37512696 http://dx.doi.org/10.3390/mi14071385 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Khan, Habibullah
Islam, Md. Monirul
Roya, Rajnin Imran
Azad, Sariha Noor
Alam, Mahbub
Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
title Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
title_full Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
title_fullStr Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
title_full_unstemmed Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
title_short Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
title_sort performance analysis of an α-graphyne nano-field effect transistor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385303/
https://www.ncbi.nlm.nih.gov/pubmed/37512696
http://dx.doi.org/10.3390/mi14071385
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