Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi(2)Sr(2)Co(2)O(y) Thin Films Grown on Al(2)O(3) (0001) Substrate

Bi(2)Sr(2)Co(2)O(y) thin films were grown on 10° vicinal-cut Al(2)O(3) (0001) single crystalline substrates by pulsed laser-deposition techniques with in situ annealing, post-annealing and non-annealing process, respectively. The pure phase Bi(2)Sr(2)Co(2)O(y) thin film was obtained with a non-annealing process. The result of X-ray diffraction showed that Bi(2)Sr(2)Co(2)O(y) thin film was obviously c-axis preferred orientation. The laser-induced thermoelectric voltage signals were detected in Bi(2)Sr(2)Co(2)O(y) thin films, which originated from the anisotropy of the Seebeck coefficient. The maximum peak value of laser-induced thermoelectric voltage was strong and could reach as large as 0.44 V and the response time was 1.07 μs when the deposition time was 6 min. Furthermore, the peak voltage enhanced linearly with the single-pulse laser energy. These characteristics demonstrate that Bi(2)Sr(2)Co(2)O(y) thin film is also an excellent choice for laser energy/power detectors.