GaN/ZnO hybrid nanostructures for improved photocatalytic performance: One-step synthesis

Nanostructured semiconductor materials are considered potential candidates for the degradation of textile wastewater via the photocatalytic process. This study aims to produce hexagonal gallium nitride (GaN) nanoplates and zinc oxide (ZnO) nanoparticles in a deionized water environment utilizing a one-step arc discharge process. Detailed characterization of samples has been completed via scanning electron microscope (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and UV visible spectroscopy methods. The hybrid nanostructure morphologies consist of nanoplates and nanorods of different sizes. The photoperformance of GaN/ZnO hybrid nanostructures was assessed via the malachite green (MG) dye degradation under UV exposure. Under UV exposure, the degradation yield reached 98% in 60 min. Compared to individual ZnO and GaN nanoparticles, the photocatalytic reaction rate of the GaN/ZnO photocatalyst is 2.2 and 3.6 times faster, respectively. Besides, the GaN/ZnO hybrid nanostructures show excellent photocatalytic stability. The energy consumption of the photocatalytic degradation in the presence of GaN/ZnO hybrid nanostructures was 1.688 kWhL(−1). These results demonstrate that the GaN/ZnO hybrid nanostructures with improved photocatalytic activity are a reasonable option for the decomposition of textile wastewater under UV light exposure.