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Bandlike Transport and Charge-Carrier Dynamics in BiOI Films

[Image: see text] Following the emergence of lead halide perovskites (LHPs) as materials for efficient solar cells, research has progressed to explore stable, abundant, and nontoxic alternatives. However, the performance of such lead-free perovskite-inspired materials (PIMs) still lags significantly...

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Detalles Bibliográficos
Autores principales: Lal, Snigdha, Righetto, Marcello, Ulatowski, Aleksander M., Motti, Silvia G., Sun, Zhuotong, MacManus-Driscoll, Judith L., Hoye, Robert L. Z., Herz, Laura M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10388347/
https://www.ncbi.nlm.nih.gov/pubmed/37462354
http://dx.doi.org/10.1021/acs.jpclett.3c01520
Descripción
Sumario:[Image: see text] Following the emergence of lead halide perovskites (LHPs) as materials for efficient solar cells, research has progressed to explore stable, abundant, and nontoxic alternatives. However, the performance of such lead-free perovskite-inspired materials (PIMs) still lags significantly behind that of their LHP counterparts. For bismuth-based PIMs, one significant reason is a frequently observed ultrafast charge-carrier localization (or self-trapping), which imposes a fundamental limit on long-range mobility. Here we report the terahertz (THz) photoconductivity dynamics in thin films of BiOI and demonstrate a lack of such self-trapping, with good charge-carrier mobility, reaching ∼3 cm(2) V(–1) s(–1) at 295 K and increasing gradually to ∼13 cm(2) V(–1) s(–1) at 5 K, indicative of prevailing bandlike transport. Using a combination of transient photoluminescence and THz- and microwave-conductivity spectroscopy, we further investigate charge-carrier recombination processes, revealing charge-specific trapping of electrons at defects in BiOI over nanoseconds and low bimolecular band-to-band recombination. Subject to the development of passivation protocols, BiOI thus emerges as a superior light-harvesting semiconductor among the family of bismuth-based semiconductors.