Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind of epitaxy is pr...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Fang, Wang, Tao, Gao, Xin, Yang, Huaiyuan, Zhang, Zhihong, Guo, Yucheng, Yuan, Ye, Huang, Zhen, Tang, Jilin, Sheng, Bowen, Chen, Zhaoying, Liu, Kaihui, Shen, Bo, Li, Xin-Zheng, Peng, Hailin, Wang, Xinqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10396303/
https://www.ncbi.nlm.nih.gov/pubmed/37531436
http://dx.doi.org/10.1126/sciadv.adf8484

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10396303/
https://www.ncbi.nlm.nih.gov/pubmed/37531436
http://dx.doi.org/10.1126/sciadv.adf8484

Ejemplares similares