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Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive

The notorious dendrite growth and hydrogen evolution reaction (HER) are considered as main barriers that hinder the stability of the Zn‐metal anode. Herein, molecular engineering is conducted to optimize the inner Helmholtz plane with a trace of amphiphilic dibenzenesulfonimide (BBI) in an aqueous e...

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Autores principales: Yang, Jun, Han, Zhiqiang, Wang, Zhiqiang, Song, Liying, Zhang, Busheng, Chen, Hongming, Li, Xing, Lau, Woon‐Ming, Zhou, Dan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10401170/
https://www.ncbi.nlm.nih.gov/pubmed/37203289
http://dx.doi.org/10.1002/advs.202301785
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author Yang, Jun
Han, Zhiqiang
Wang, Zhiqiang
Song, Liying
Zhang, Busheng
Chen, Hongming
Li, Xing
Lau, Woon‐Ming
Zhou, Dan
author_facet Yang, Jun
Han, Zhiqiang
Wang, Zhiqiang
Song, Liying
Zhang, Busheng
Chen, Hongming
Li, Xing
Lau, Woon‐Ming
Zhou, Dan
author_sort Yang, Jun
collection PubMed
description The notorious dendrite growth and hydrogen evolution reaction (HER) are considered as main barriers that hinder the stability of the Zn‐metal anode. Herein, molecular engineering is conducted to optimize the inner Helmholtz plane with a trace of amphiphilic dibenzenesulfonimide (BBI) in an aqueous electrolyte. Both experimental and computational results reveal that the BBI(−) binds strongly with Zn(2+) to form {Zn(BBI)(H(2)O)(4)}(+) in the electrical double layer and reduces the water supply to the Zn anode. During the electroplating process, {Zn(BBI)(H(2)O)(4)}(+) is “compressed” to the Zn anode/electrolyte interface by Zn(2+) flow, and accumulated and adsorbed on the surface of the Zn anode to form a dynamic water‐poor inner Helmholtz plane to inhibit HER. Meanwhile, the{Zn(BBI)(H(2)O)(4)}(+) on the Zn anode surface possesses an even distribution, delivering uniform Zn(2+) flow for smooth deposition without Zn dendrite growth. Consequently, the stability of the Zn anode is largely improved with merely 0.02 M BBI(−) to the common electrolyte of 1 M ZnSO(4). The assembled Zn||Zn symmetric cell can be cycled for more than 1180 h at 5 mA cm(−2) and 5 mA h cm(−2). Besides, the practicability in Zn||NaV(3)O(8)·1.5 H(2)O full cell is evaluated, which suggests efficient storage even under a high mass loading of 12 mg cm(−2).
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spelling pubmed-104011702023-08-05 Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive Yang, Jun Han, Zhiqiang Wang, Zhiqiang Song, Liying Zhang, Busheng Chen, Hongming Li, Xing Lau, Woon‐Ming Zhou, Dan Adv Sci (Weinh) Research Articles The notorious dendrite growth and hydrogen evolution reaction (HER) are considered as main barriers that hinder the stability of the Zn‐metal anode. Herein, molecular engineering is conducted to optimize the inner Helmholtz plane with a trace of amphiphilic dibenzenesulfonimide (BBI) in an aqueous electrolyte. Both experimental and computational results reveal that the BBI(−) binds strongly with Zn(2+) to form {Zn(BBI)(H(2)O)(4)}(+) in the electrical double layer and reduces the water supply to the Zn anode. During the electroplating process, {Zn(BBI)(H(2)O)(4)}(+) is “compressed” to the Zn anode/electrolyte interface by Zn(2+) flow, and accumulated and adsorbed on the surface of the Zn anode to form a dynamic water‐poor inner Helmholtz plane to inhibit HER. Meanwhile, the{Zn(BBI)(H(2)O)(4)}(+) on the Zn anode surface possesses an even distribution, delivering uniform Zn(2+) flow for smooth deposition without Zn dendrite growth. Consequently, the stability of the Zn anode is largely improved with merely 0.02 M BBI(−) to the common electrolyte of 1 M ZnSO(4). The assembled Zn||Zn symmetric cell can be cycled for more than 1180 h at 5 mA cm(−2) and 5 mA h cm(−2). Besides, the practicability in Zn||NaV(3)O(8)·1.5 H(2)O full cell is evaluated, which suggests efficient storage even under a high mass loading of 12 mg cm(−2). John Wiley and Sons Inc. 2023-05-18 /pmc/articles/PMC10401170/ /pubmed/37203289 http://dx.doi.org/10.1002/advs.202301785 Text en © 2023 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Yang, Jun
Han, Zhiqiang
Wang, Zhiqiang
Song, Liying
Zhang, Busheng
Chen, Hongming
Li, Xing
Lau, Woon‐Ming
Zhou, Dan
Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive
title Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive
title_full Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive
title_fullStr Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive
title_full_unstemmed Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive
title_short Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive
title_sort enabling stable zn anodes by molecularly engineering the inner helmholtz plane with amphiphilic dibenzenesulfonimide additive
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10401170/
https://www.ncbi.nlm.nih.gov/pubmed/37203289
http://dx.doi.org/10.1002/advs.202301785
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