High-quality superconducting α-Ta film sputtered on the heated silicon substrate

Intrigued by the discovery of the long lifetime in the α-Ta/Al(2)O(3)-based Transmon qubit, researchers recently found α-Ta film is a promising platform for fabricating multi-qubits with long coherence time. To meet the requirements for integrating superconducting quantum circuits, the ideal method is to grow α-Ta film on a silicon substrate compatible with industrial manufacturing. Here we report the α-Ta film sputter-grown on Si (100) with a low-loss superconducting TiN(x) buffer layer. The α-Ta film with a large growth temperature window has a good crystalline character. The superconducting critical transition temperature (T(c)) and residual resistivity ratio (RRR) in the α-Ta film grown at 500 °C are higher than that in the α-Ta film grown at room temperature (RT). These results provide crucial experimental clues toward understanding the connection between the superconductivity and the materials' properties in the α-Ta film and open a new route for producing a high-quality α-Ta film on silicon substrate for future industrial superconducting quantum computers.