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Rational design on high-performance triboelectric nanogenerator consisting of silicon carbide@silicon dioxide nanowhiskers/polydimethylsiloxane (SiC@SiO(2)/PDMS) nanocomposite films

The relatively low output performance of triboelectric nanogenerator (TENG), which faces a challenge in performance improvement, limits its practical applications. Here, a high-performance TENG consisting of a silicon carbide@silicon dioxide nanowhiskers/polydimethylsiloxane (SiC@SiO(2)/PDMS) nanoco...

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Detalles Bibliográficos
Autores principales: Zhao, Kun, Sun, Wanru, Li, Suixin, Song, Zhenhua, Zhong, Ming, Zhang, Ding, Gu, Bing-Ni, Liu, Ming-Jin, Fu, Hao, Liu, Hongjie, Meng, Cheng, Chueh, Yu-Lun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409695/
https://www.ncbi.nlm.nih.gov/pubmed/37382740
http://dx.doi.org/10.1186/s11671-023-03822-8
Descripción
Sumario:The relatively low output performance of triboelectric nanogenerator (TENG), which faces a challenge in performance improvement, limits its practical applications. Here, a high-performance TENG consisting of a silicon carbide@silicon dioxide nanowhiskers/polydimethylsiloxane (SiC@SiO(2)/PDMS) nanocomposite film and a superhydrophobic aluminum (Al) plate as triboelectric layers is demonstrated. The 7 wt% SiC@SiO(2)/PDMS TENG presents a peak voltage of 200 V and a peak current of 30 μA, which are ~ 300 and ~ 500% over that of the PDMS TENG, owing to an increase in dielectric constant and a decrease in dielectric loss of the PDMS film because of electric insulated SiC@SiO(2) nanowhiskers. Furthermore, a 10 μF capacitor can be charged up to 3 V within ~ 87 s, which can be continuously operated on the electronic watch for 14 s. The work provides an effective strategy for improving output performance of TENG by adding core–shell nanowhiskers to modulate the dielectric properties of organic materials. GRAPHICAL ABSTRACT: [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1186/s11671-023-03822-8.