Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-int...

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Detalles Bibliográficos
Autores principales: Zahoor, Furqan, Hussin, Fawnizu Azmadi, Isyaku, Usman Bature, Gupta, Shagun, Khanday, Farooq Ahmad, Chattopadhyay, Anupam, Abbas, Haider
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409712/
https://www.ncbi.nlm.nih.gov/pubmed/37382679
http://dx.doi.org/10.1186/s11671-023-03775-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409712/
https://www.ncbi.nlm.nih.gov/pubmed/37382679
http://dx.doi.org/10.1186/s11671-023-03775-y

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