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Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy

Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this...

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Autores principales: Li, Yaolong, Jiang, Pengzuo, Lyu, Xiaying, Li, Xiaofang, Qi, Huixin, Tang, Jinglin, Xue, Zhaohang, Yang, Hong, Lu, Guowei, Sun, Quan, Hu, Xiaoyong, Gao, Yunan, Gong, Qihuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10415285/
https://www.ncbi.nlm.nih.gov/pubmed/37563183
http://dx.doi.org/10.1038/s41467-023-40603-4
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author Li, Yaolong
Jiang, Pengzuo
Lyu, Xiaying
Li, Xiaofang
Qi, Huixin
Tang, Jinglin
Xue, Zhaohang
Yang, Hong
Lu, Guowei
Sun, Quan
Hu, Xiaoyong
Gao, Yunan
Gong, Qihuang
author_facet Li, Yaolong
Jiang, Pengzuo
Lyu, Xiaying
Li, Xiaofang
Qi, Huixin
Tang, Jinglin
Xue, Zhaohang
Yang, Hong
Lu, Guowei
Sun, Quan
Hu, Xiaoyong
Gao, Yunan
Gong, Qihuang
author_sort Li, Yaolong
collection PubMed
description Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this issue by applying time-resolved photoemission electron microscopy to a low-dimensional wide-bandgap semiconductor, hexagonal boron nitride (hBN). Taking a low-loss dielectric planar waveguide as a fundamental structure, static vector near-field vortices with different topological charges and the spatiotemporal evolution of waveguide modes are directly revealed. With the lowest-order vortex structure, strong nanofocusing in real space is realized, while near-vertical photoemission in momentum space and narrow spread in energy space are simultaneously observed due to the atomically flat surface of hBN and the small photoemission horizon set by the limited photon energies. Our approach provides a strategy for the realization of flat photoemission emitters.
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spelling pubmed-104152852023-08-12 Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy Li, Yaolong Jiang, Pengzuo Lyu, Xiaying Li, Xiaofang Qi, Huixin Tang, Jinglin Xue, Zhaohang Yang, Hong Lu, Guowei Sun, Quan Hu, Xiaoyong Gao, Yunan Gong, Qihuang Nat Commun Article Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this issue by applying time-resolved photoemission electron microscopy to a low-dimensional wide-bandgap semiconductor, hexagonal boron nitride (hBN). Taking a low-loss dielectric planar waveguide as a fundamental structure, static vector near-field vortices with different topological charges and the spatiotemporal evolution of waveguide modes are directly revealed. With the lowest-order vortex structure, strong nanofocusing in real space is realized, while near-vertical photoemission in momentum space and narrow spread in energy space are simultaneously observed due to the atomically flat surface of hBN and the small photoemission horizon set by the limited photon energies. Our approach provides a strategy for the realization of flat photoemission emitters. Nature Publishing Group UK 2023-08-10 /pmc/articles/PMC10415285/ /pubmed/37563183 http://dx.doi.org/10.1038/s41467-023-40603-4 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Li, Yaolong
Jiang, Pengzuo
Lyu, Xiaying
Li, Xiaofang
Qi, Huixin
Tang, Jinglin
Xue, Zhaohang
Yang, Hong
Lu, Guowei
Sun, Quan
Hu, Xiaoyong
Gao, Yunan
Gong, Qihuang
Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_full Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_fullStr Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_full_unstemmed Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_short Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_sort revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10415285/
https://www.ncbi.nlm.nih.gov/pubmed/37563183
http://dx.doi.org/10.1038/s41467-023-40603-4
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