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Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10415285/ https://www.ncbi.nlm.nih.gov/pubmed/37563183 http://dx.doi.org/10.1038/s41467-023-40603-4 |
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author | Li, Yaolong Jiang, Pengzuo Lyu, Xiaying Li, Xiaofang Qi, Huixin Tang, Jinglin Xue, Zhaohang Yang, Hong Lu, Guowei Sun, Quan Hu, Xiaoyong Gao, Yunan Gong, Qihuang |
author_facet | Li, Yaolong Jiang, Pengzuo Lyu, Xiaying Li, Xiaofang Qi, Huixin Tang, Jinglin Xue, Zhaohang Yang, Hong Lu, Guowei Sun, Quan Hu, Xiaoyong Gao, Yunan Gong, Qihuang |
author_sort | Li, Yaolong |
collection | PubMed |
description | Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this issue by applying time-resolved photoemission electron microscopy to a low-dimensional wide-bandgap semiconductor, hexagonal boron nitride (hBN). Taking a low-loss dielectric planar waveguide as a fundamental structure, static vector near-field vortices with different topological charges and the spatiotemporal evolution of waveguide modes are directly revealed. With the lowest-order vortex structure, strong nanofocusing in real space is realized, while near-vertical photoemission in momentum space and narrow spread in energy space are simultaneously observed due to the atomically flat surface of hBN and the small photoemission horizon set by the limited photon energies. Our approach provides a strategy for the realization of flat photoemission emitters. |
format | Online Article Text |
id | pubmed-10415285 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-104152852023-08-12 Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy Li, Yaolong Jiang, Pengzuo Lyu, Xiaying Li, Xiaofang Qi, Huixin Tang, Jinglin Xue, Zhaohang Yang, Hong Lu, Guowei Sun, Quan Hu, Xiaoyong Gao, Yunan Gong, Qihuang Nat Commun Article Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this issue by applying time-resolved photoemission electron microscopy to a low-dimensional wide-bandgap semiconductor, hexagonal boron nitride (hBN). Taking a low-loss dielectric planar waveguide as a fundamental structure, static vector near-field vortices with different topological charges and the spatiotemporal evolution of waveguide modes are directly revealed. With the lowest-order vortex structure, strong nanofocusing in real space is realized, while near-vertical photoemission in momentum space and narrow spread in energy space are simultaneously observed due to the atomically flat surface of hBN and the small photoemission horizon set by the limited photon energies. Our approach provides a strategy for the realization of flat photoemission emitters. Nature Publishing Group UK 2023-08-10 /pmc/articles/PMC10415285/ /pubmed/37563183 http://dx.doi.org/10.1038/s41467-023-40603-4 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Li, Yaolong Jiang, Pengzuo Lyu, Xiaying Li, Xiaofang Qi, Huixin Tang, Jinglin Xue, Zhaohang Yang, Hong Lu, Guowei Sun, Quan Hu, Xiaoyong Gao, Yunan Gong, Qihuang Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy |
title | Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy |
title_full | Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy |
title_fullStr | Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy |
title_full_unstemmed | Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy |
title_short | Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy |
title_sort | revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10415285/ https://www.ncbi.nlm.nih.gov/pubmed/37563183 http://dx.doi.org/10.1038/s41467-023-40603-4 |
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