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Universal radiation tolerant semiconductor

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show...

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Autores principales: Azarov, Alexander, Fernández, Javier García, Zhao, Junlei, Djurabekova, Flyura, He, Huan, He, Ru, Prytz, Øystein, Vines, Lasse, Bektas, Umutcan, Chekhonin, Paul, Klingner, Nico, Hlawacek, Gregor, Kuznetsov, Andrej
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10415340/
https://www.ncbi.nlm.nih.gov/pubmed/37563159
http://dx.doi.org/10.1038/s41467-023-40588-0
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author Azarov, Alexander
Fernández, Javier García
Zhao, Junlei
Djurabekova, Flyura
He, Huan
He, Ru
Prytz, Øystein
Vines, Lasse
Bektas, Umutcan
Chekhonin, Paul
Klingner, Nico
Hlawacek, Gregor
Kuznetsov, Andrej
author_facet Azarov, Alexander
Fernández, Javier García
Zhao, Junlei
Djurabekova, Flyura
He, Huan
He, Ru
Prytz, Øystein
Vines, Lasse
Bektas, Umutcan
Chekhonin, Paul
Klingner, Nico
Hlawacek, Gregor
Kuznetsov, Andrej
author_sort Azarov, Alexander
collection PubMed
description Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/β) double polymorph Ga(2)O(3) structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in γ-Ga(2)O(3). In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the β-to-γ Ga(2)O(3) transformation, as a function of the increased disorder in β-Ga(2)O(3) and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that γ/β double polymorph Ga(2)O(3) structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.
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spelling pubmed-104153402023-08-12 Universal radiation tolerant semiconductor Azarov, Alexander Fernández, Javier García Zhao, Junlei Djurabekova, Flyura He, Huan He, Ru Prytz, Øystein Vines, Lasse Bektas, Umutcan Chekhonin, Paul Klingner, Nico Hlawacek, Gregor Kuznetsov, Andrej Nat Commun Article Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/β) double polymorph Ga(2)O(3) structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in γ-Ga(2)O(3). In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the β-to-γ Ga(2)O(3) transformation, as a function of the increased disorder in β-Ga(2)O(3) and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that γ/β double polymorph Ga(2)O(3) structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors. Nature Publishing Group UK 2023-08-10 /pmc/articles/PMC10415340/ /pubmed/37563159 http://dx.doi.org/10.1038/s41467-023-40588-0 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Azarov, Alexander
Fernández, Javier García
Zhao, Junlei
Djurabekova, Flyura
He, Huan
He, Ru
Prytz, Øystein
Vines, Lasse
Bektas, Umutcan
Chekhonin, Paul
Klingner, Nico
Hlawacek, Gregor
Kuznetsov, Andrej
Universal radiation tolerant semiconductor
title Universal radiation tolerant semiconductor
title_full Universal radiation tolerant semiconductor
title_fullStr Universal radiation tolerant semiconductor
title_full_unstemmed Universal radiation tolerant semiconductor
title_short Universal radiation tolerant semiconductor
title_sort universal radiation tolerant semiconductor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10415340/
https://www.ncbi.nlm.nih.gov/pubmed/37563159
http://dx.doi.org/10.1038/s41467-023-40588-0
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