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Pressure Control of Nonferroelastic Ferroelectric Domains in ErMnO(3)

[Image: see text] Mechanical pressure controls the structural, electric, and magnetic order in solid-state systems, allowing tailoring of their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry-breaking order...

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Detalles Bibliográficos
Autores principales: Sandvik, Olav W., Müller, Aaron Merlin, Ånes, Håkon W., Zahn, Manuel, He, Jiali, Fiebig, Manfred, Lottermoser, Thomas, Rojac, Tadej, Meier, Dennis, Schultheiß, Jan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10416345/
https://www.ncbi.nlm.nih.gov/pubmed/37470766
http://dx.doi.org/10.1021/acs.nanolett.3c01638
Descripción
Sumario:[Image: see text] Mechanical pressure controls the structural, electric, and magnetic order in solid-state systems, allowing tailoring of their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry-breaking order parameter enables hysteretic switching of the strain state and ferroelectric domain engineering. Here, we study the pressure-driven response in a nonferroelastic ferroelectric, ErMnO(3), where the classical stress–strain coupling is absent and the domain formation is governed by creation–annihilation processes of topological defects. By annealing ErMnO(3) polycrystals under variable pressures in the MPa regime, we transform nonferroelastic vortex-like domains into stripe-like domains. The width of the stripe-like domains is determined by the applied pressure as we confirm by three-dimensional phase field simulations, showing that pressure leads to oriented layer-like periodic domains. Our work demonstrates the possibility to utilize mechanical pressure for domain engineering in nonferroelastic ferroelectrics, providing a lever to control their dielectric and piezoelectric responses.