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Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic

[Image: see text] Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging electronics applications allowing superior performance characteristics such as fast motion, high density, and nonvolatility to process information. However, these devices rely on an external mag...

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Autores principales: Li, Xin, Singh, Hanuman, Bao, Yi, Luo, Qiang, Li, Shihao, Chatterjee, Jyotirmoy, Goiriena-Goikoetxea, Maite, Xiao, Zhuyun, Tamura, Nobumichi, Candler, Rob N., You, Long, Bokor, Jeff, Hong, Jeongmin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10416346/
https://www.ncbi.nlm.nih.gov/pubmed/37467358
http://dx.doi.org/10.1021/acs.nanolett.3c00707
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author Li, Xin
Singh, Hanuman
Bao, Yi
Luo, Qiang
Li, Shihao
Chatterjee, Jyotirmoy
Goiriena-Goikoetxea, Maite
Xiao, Zhuyun
Tamura, Nobumichi
Candler, Rob N.
You, Long
Bokor, Jeff
Hong, Jeongmin
author_facet Li, Xin
Singh, Hanuman
Bao, Yi
Luo, Qiang
Li, Shihao
Chatterjee, Jyotirmoy
Goiriena-Goikoetxea, Maite
Xiao, Zhuyun
Tamura, Nobumichi
Candler, Rob N.
You, Long
Bokor, Jeff
Hong, Jeongmin
author_sort Li, Xin
collection PubMed
description [Image: see text] Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging electronics applications allowing superior performance characteristics such as fast motion, high density, and nonvolatility to process information. However, these devices rely on an external magnetic field, which limits their implementation; this is particularly problematic in large-scale applications. Multiferroic systems consisting of a piezoelectric substrate coupled with ferromagnets provide a potential solution that provides the possibility of controlling magnetization through an electric field via magnetoelastic coupling. Strain-induced magnetization anisotropy tilting can influence the DW motion in a controllable way. We demonstrate a method to perform all-electrical logic operations using such a system. Ferromagnetic coupling between neighboring magnetic domains induced by the electric-field-controlled strain has been exploited to promote noncollinear spin alignment, which is used for realizing essential building blocks, including DW generation, propagation, and pinning, in all implementations of Boolean logic, which will pave the way for scalable memory-in-logic applications.
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spelling pubmed-104163462023-08-12 Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic Li, Xin Singh, Hanuman Bao, Yi Luo, Qiang Li, Shihao Chatterjee, Jyotirmoy Goiriena-Goikoetxea, Maite Xiao, Zhuyun Tamura, Nobumichi Candler, Rob N. You, Long Bokor, Jeff Hong, Jeongmin Nano Lett [Image: see text] Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging electronics applications allowing superior performance characteristics such as fast motion, high density, and nonvolatility to process information. However, these devices rely on an external magnetic field, which limits their implementation; this is particularly problematic in large-scale applications. Multiferroic systems consisting of a piezoelectric substrate coupled with ferromagnets provide a potential solution that provides the possibility of controlling magnetization through an electric field via magnetoelastic coupling. Strain-induced magnetization anisotropy tilting can influence the DW motion in a controllable way. We demonstrate a method to perform all-electrical logic operations using such a system. Ferromagnetic coupling between neighboring magnetic domains induced by the electric-field-controlled strain has been exploited to promote noncollinear spin alignment, which is used for realizing essential building blocks, including DW generation, propagation, and pinning, in all implementations of Boolean logic, which will pave the way for scalable memory-in-logic applications. American Chemical Society 2023-07-19 /pmc/articles/PMC10416346/ /pubmed/37467358 http://dx.doi.org/10.1021/acs.nanolett.3c00707 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Li, Xin
Singh, Hanuman
Bao, Yi
Luo, Qiang
Li, Shihao
Chatterjee, Jyotirmoy
Goiriena-Goikoetxea, Maite
Xiao, Zhuyun
Tamura, Nobumichi
Candler, Rob N.
You, Long
Bokor, Jeff
Hong, Jeongmin
Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic
title Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic
title_full Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic
title_fullStr Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic
title_full_unstemmed Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic
title_short Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic
title_sort energy efficient all-electric-field-controlled multiferroic magnetic domain-wall logic
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10416346/
https://www.ncbi.nlm.nih.gov/pubmed/37467358
http://dx.doi.org/10.1021/acs.nanolett.3c00707
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