SiC Doping Impact during Conducting AFM under Ambient Atmosphere

The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the strong electric field that builds up around and below...

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Detalles Bibliográficos
Autores principales: Villeneuve-Faure, Christina, Boumaarouf, Abdelhaq, Shah, Vishal, Gammon, Peter M., Lüders, Ulrike, Coq Germanicus, Rosine
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10419843/
https://www.ncbi.nlm.nih.gov/pubmed/37570104
http://dx.doi.org/10.3390/ma16155401

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10419843/
https://www.ncbi.nlm.nih.gov/pubmed/37570104
http://dx.doi.org/10.3390/ma16155401

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